参数资料
型号: 2SJ624-A
元件分类: 小信号晶体管
英文描述: 4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: SC-96, 3 PIN
文件页数: 5/8页
文件大小: 71K
代理商: 2SJ624-A
Data Sheet D15890EJ1V0DS
5
2SJ624
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS
(on)
-
Drai
n
t
o
S
ourc
e
On-s
ta
te
Res
is
tanc
e
-
m
0
20
40
60
80
100
-0.01
-0.1
-1
-10
-100
VGS =
4.5 V
Pulsed
25°C
75°C
TA = 125°C
ID - Drain Current - A
R
DS
(on)
-
Drai
n
t
o
S
ourc
e
On-s
ta
te
Res
is
tanc
e
-
m
20
40
60
80
100
120
-0.01
-0.1
-1
-10
-100
VGS =
2.5 V
Pulsed
25°C
75°C
TA = 125°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
SWITCHING CHARACTERISTICS
R
DS
(on)
-
Drai
n
t
o
S
ourc
e
On-s
ta
te
Res
is
tanc
e
-
m
40
60
80
100
120
-0.01
-0.1
-1
-10
-100
VGS =
1.8 V
Pulsed
25°C
75°C
TA = 125°C
ID - Drain Current - A
td(
on)
,t
r,
t
d(
of
f),
t
f-
S
w
itc
h
ing
Ti
m
e
-
ns
1
10
100
1000
-0.1
-1
-10
VDD =
10 V
VGS =
4.0 V
RG = 10
td(off)
td(on)
tf
tr
ID - Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
C
is
s,
C
os
s,
C
rs
s-
Capac
itanc
e
-
pF
10
100
1000
10000
-0.1
-1
-10
-100
VGS = 0 V
f = 1.0 MHz
Ciss
Coss
Crss
VDS - Drain to Source Voltage - V
IF
-
Di
ode
Forw
ard
Current
-
A
0.01
0.1
1
10
100
0.4
0.6
0.8
1
1.2
1.4
Pulsed
VGS = 0 V
VF(S-D) - Source to Drain Voltage - V
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相关代理商/技术参数
参数描述
2SJ624-T1B-A 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 20V 4.5A 3-Pin Thin-Type Mini-Mold T/R Cut Tape
2SJ625 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
2SJ625-T1B-A 制造商:Renesas Electronics 功能描述:Cut Tape
2SJ625-T1B-A/XM 制造商:Renesas Electronics Corporation 功能描述:
2SJ626 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR