参数资料
型号: 2SJ635
厂商: SANYO SEMICONDUCTOR CO LTD
元件分类: 小信号晶体管
英文描述: 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: TP, 3 PIN
文件页数: 2/4页
文件大小: 34K
代理商: 2SJ635
2SJ635
No.8277-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Turn-ON Delay Time
td(on)
See specified Test Circuit.
18
ns
Rise Time
tr
See specified Test Circuit.
80
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
200
ns
Fall Time
tf
See specified Test Circuit.
125
ns
Total Gate Charge
Qg
VDS=--30V, VGS=--10V, ID=--12A
45
nC
Gate-to-Source Charge
Qgs
VDS=--30V, VGS=--10V, ID=--12A
10
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--30V, VGS=--10V, ID=--12A
7
nC
Diode Forward Voltage
VSD
IS=--12A, VGS=0V
--0.9
--1.2
V
Package Dimensions
unit : mm
7518-004
7003-004
Switching Time Test Circuit
6.5
5.0
2.3
0.5
12
4
3
0.85
0.7
1.2
0.6
0.5
2.3
7.0
7.5
1.6
0.8
5.5
1.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
PW=10
s
D.C.
≤1%
0V
--10V
VIN
P.G
50
G
S
ID= --6A
RL=5
VDD= --30V
VOUT
2SJ635
VIN
D
6.5
5.0
2.3
0.5
12
4
3
0.85
0.6
0.5
1.2
2.3
7.0
2.5
5.5
1.5
0.8
0 to 0.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
相关PDF资料
PDF描述
2SJ635-TL 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ643TP 6000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ645-TL 8000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ645 8000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ648 400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
相关代理商/技术参数
参数描述
2SJ635-TL-E 制造商:Rochester Electronics LLC 功能描述: 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 60V 12A TO-251 制造商:Sony Semiconductor Solutions Division 功能描述:
2SJ636 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:2SJ636
2SJ637 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:DC/DC FOR CONVERTER
2SJ643 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P CHANNEL MOS SILICON TRANSISTOR
2SJ645 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P CHANNEL MOS SILICON TRANSISTOR