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参数资料
| 型号： | 2SJ643TP |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 6000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | TP, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 34K |
| 代理商： | 2SJ643TP |
2SJ643
No.7309-2/4
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--20
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
--6
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
--24
A
Allowable Power Dissipation
PD
1W
Tc=25C
10
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--20V, VGS=0
--10
A
Gate-to-Source Leakage Current
IGSS
VGS= ±8V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--0.3
--1.0
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--3A
2.1
3
S
RDS(on)1
ID=--3A, VGS=--4V
120
160
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--1.5A, VGS=--2.5V
150
210
m
RDS(on)3
ID=--0.1A, VGS=--1.8V
200
300
m
Input Capacitance
Ciss
VDS=--10V, f=1MHz
410
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
60
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
40
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
10
ns
Rise Time
tr
See specified Test Circuit.
20
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
30
ns
Fall Time
tf
See specified Test Circuit.
10
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--4V, ID=--6A
4.4
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--4V, ID=--6A
0.6
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--4V, ID=--6A
1.2
nC
Diode Forward Voltage
VSD
IS=--6A, VGS=0
--1.0
--1.2
V
Marking : J643
Switching Time Test Circuit
PW=10
s
D.C.
≤1%
P.G
50
G
S
D
ID= --3A
RL=3.33
VDD= --10V
VOUT
2SJ643
VIN
0V
--4V
VIN
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ645 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P CHANNEL MOS SILICON TRANSISTOR |
| 2SJ645-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 20V 8A TO251 |
| 2SJ646 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:2SJ646 |
| 2SJ646-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 30V 8A TO251 |
| 2SJ647 | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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