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参数资料
| 型号： | 2SJ687 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | MP-3ZK, TO-252, 3 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 161K |
| 代理商： | 2SJ687 |
Data Sheet D18719EJ2V0DS
7
2SJ687
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
6.5
±0.2
2.3
±0.1
0.5
±0.1
0.76
±0.12
0 to 0.25
0.5
±0.1
1.0
No Plating
5.1 TYP.
1.0
TYP.
6.1
±
0.2
0.51
MIN.
4.0
MIN
.
0.8
10.4
MAX.
(9.8
TYP.)
4.3 MIN.
1
4
23
1.14 MAX.
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ687-ZK-E2-AY | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ687-ZK-E1-AY | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ687-ZK-E2-AY | 20 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK0601G | 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ687-ZK-E1-AY | 功能描述:MOSFET P-CH -20V -20A TO-252 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SJ687-ZK-E2-AY | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ73 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | P-CHANNEL | DUAL | 5MA I(DSS) |
| 2SJ74 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:P CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS) |
| 2SJ74_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Low Noise Audio Amplifier Applications |
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