参数资料
型号: 2SK0662G
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 20 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET
封装: ROHS COMPLIANT, SMINI3-F2, 3 PIN
文件页数: 2/3页
文件大小: 206K
代理商: 2SK0662G
2SK0662G
2
SJF00055CED
This product complies with the RoHS Directive (EU 2002/95/EC).
gm VGS
gm ID
Ciss , Coss VDS
PD Ta
ID VDS
ID VGS
0
160
40
120
80
0
240
200
160
120
80
40
Power
dissipation
P
D
(mW
)
Ambient temperature T
a (°C)
012
10
8
26
4
0
8
6
2
4
Ta
= 25°C
VGS
= 0 V
0.2 V
0.4 V
0.3 V
0.1 V
Drain-source voltage V
DS (V)
Drain
current
I
D
(mA
)
–1.0
0
– 0.2
– 0.8
– 0.4
– 0.6
0
9.6
8.0
6.4
4.8
3.2
1.6
Ta
= 75°C
25
°C
25°C
VDS
= 10 V
Gate-source voltage V
GS (V)
Drain
current
I
D
(mA
)
– 0.8
0
– 0.6
– 0.2
– 0.4
0
20
16
12
8
4
VDS
= 10 V
Ta
= 25°C
IDSS
= 5 mA
2 mA
Gate-source voltage V
GS (V)
Mutual
conductance
g
m
(mS
)
08
26
4
0
20
16
12
8
4
VDS
= 10 V
Ta
= 25°C
IDSS
= 5 mA
2 mA
Drain current I
D (mA)
Mutual
conductance
g
m
(mS
)
110
102
0
10
8
6
4
2
VGS
= 3 V
f
= 1 MHz
Ta
= 25°C
C
iss
C
oss
Drain-source voltage V
DS (V)
Short-circuit
forward
transfer
capacitance
(Common-source)
C
iss
,
Short-circuit
output
capacitance
(Common-source)
C
oss
(pF)
Crss VDS
NF
f
110
102
0
5
4
3
2
1
VGS
= 3 V
f
= 1 MHz
Ta
= 25°C
Drain-source voltage V
DS (V)
Reverse
transfer
capacitance
(Common-source)
C
rss
(pF)
10
102
103
104
105
0
12
10
8
6
4
2
VDS
= 10 V
ID
= 5.2 mA
Ta
= 25°C
Rg
= 500
1 k
Frequency f (Hz)
Noise
figure
NF
(dB)
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相关代理商/技术参数
参数描述
2SK0663 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Low-Frequency Amplification
2SK0663(2SK663) 制造商:未知厂家 制造商全称:未知厂家 功能描述:Small-signal device - Small-signal FETs - Junction FETs
2SK06630RL 功能描述:JFET N-CH 55V 30MA SMINI-3 RoHS:是 类别:分离式半导体产品 >> JFET(结点场效应 系列:- 标准包装:8,000 系列:- 电流 - 漏极(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏极至源极电压(Vdss):30V 漏极电流 (Id) - 最大:10mA FET 型:N 沟道 电压 - 击穿 (V(BR)GSS):- 电压 - 切断 (VGS 关)@ Id:180mV @ 1µA 输入电容 (Ciss) @ Vds:4pF @ 10V 电阻 - RDS(开):200 欧姆 安装类型:表面贴装 包装:带卷 (TR) 封装/外壳:3-XFDFN 供应商设备封装:3-ECSP1006 功率 - 最大:100mW
2SK0663GRL 功能描述:JFET N-CH 55V 30MA SMINI-3 RoHS:是 类别:分离式半导体产品 >> JFET(结点场效应 系列:- 标准包装:8,000 系列:- 电流 - 漏极(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏极至源极电压(Vdss):30V 漏极电流 (Id) - 最大:10mA FET 型:N 沟道 电压 - 击穿 (V(BR)GSS):- 电压 - 切断 (VGS 关)@ Id:180mV @ 1µA 输入电容 (Ciss) @ Vds:4pF @ 10V 电阻 - RDS(开):200 欧姆 安装类型:表面贴装 包装:带卷 (TR) 封装/外壳:3-XFDFN 供应商设备封装:3-ECSP1006 功率 - 最大:100mW
2SK0664 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Switching