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参数资料
| 型号： | 2SK1342-E |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 4/9页 |
| 文件大小： | 97K |
| 代理商： | 2SK1342-E |
2SK1342
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
900
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
8
A
Drain peak current
ID(pulse)
*1
20
A
Body to drain diode reverse drain current
IDR
8
A
Channel dissipation
Pch
*2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
900
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±25 V, VDS = 0
Zero gate voltage drain current
IDSS
—
250
A
VDS = 720 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
1.2
1.6
ID = 4 A, VGS = 10 V *
3
Forward transfer admittance
|yfs|
3.5
5.5
—
S
ID = 4 A, VDS = 20 V *
3
Input capacitance
Ciss
—
1730
—
pF
Output capacitance
Coss
—
700
—
pF
Reverse transfer capacitance
Crss
—
310
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
25
—
ns
Rise time
tr
—
135
—
ns
Turn-off delay time
td(off)
—
185
—
ns
Fall time
tf
—
130
—
ns
ID = 4 A, VGS = 10 V,
RL = 7.5
Body to drain diode forward voltage
VDF
—
0.9
—
V
IF = 8 A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
900
—
ns
IF = 8 A, VGS = 0,
diF/dt = 100 A/
s
Note:
3. Pulse test
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相关代理商/技术参数 |
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|---|---|
| 2SK1345 | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK1346 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1348 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SK1348 |
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