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参数资料
| 型号： | 2SK1342-E |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 5/9页 |
| 文件大小： | 97K |
| 代理商： | 2SK1342-E |
2SK1342
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
150
100
50
0
50
100
150
Case Temperature TC (°C)
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
50
10
1
10
100
1,000
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
20
0.2
3
30
300
Ta = 25
°C
10
s
100
s
DC
Operation
(T
C =
25
°C)
Operation
in
this
area
is limited
by
R
DS
(on)
1 ms
PW
=
10
ms
(1
Sh
ot)
5
2
0.5
1
0.1
0.05
10
20
50
Drain to Source Voltage VDS (V)
Typical Output Characteristics
8
2
10
30
40
Pulse Test
0
4
6
4.5 V
VGS = 4 V
6 V
10 V
Drain
Current
I
D
(A)
5 V
10
4
10
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
8
2
26
8
–25
°C
0
4
6
VDS = 20 V
Pulse Test
75
°C
TC = 25°C
20
820
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
16
4
412
16
0
8
12
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5 A
ID = 10 A
Pulse Test
2 A
5
2
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
2
0.1
1.0
5
20
0.5
1
Static Drain to Source on State
Resistance vs. Drain Current
0.2
0.05
10
15 V
VGS = 10 V
Pulse Test
0.2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1345 | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK1346 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1348 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SK1348 |
| 2SK135 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:LOW FREQUENCY POWER AMPLIFIER |
| 2SK1350 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SK1350 |
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