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参数资料
| 型号： | 2SK1342-E |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 7/9页 |
| 文件大小： | 97K |
| 代理商： | 2SK1342-E |
2SK1342
Rev.2.00 Sep 07, 2005 page 5 of 6
10
2.0
Source to Drain Voltage VSD (V)
Reverse
Drain
Current
I
DR
(A)
8
0.4
0.8
1.6
0
4
6
0
2
1.2
Pulse Test
5 V, 10 V
VGS = 0, –5 V
Reverse Drain Current vs.
Source to Drain Voltage
3
Pulse Width PW (S)
Normalized
Transient
Thermal
Impedance
γ S
(t)
1.0
0.1
0.3
D = 1
10
0.03
0.01
100
10 m
100 m
1
10
1 m
TC = 25°C
0.5
0.2
0.1
0.05
0.02
0.01
1 S
hot
Pulse
Normalized Transient Thermal Impedance vs. Pulse Width
T
PW
PDM
D =
T
PW
θch–c (t) = γ
S (t) θch–c
θch–c = 1.25°C/W, T
C = 25°C
Switching Time Test Circuit
Vin Monitor
Vin
10 V
50
D.U.T
Vout Monitor
VDD
30 V
=
.
RL
Waveforms
Vin
Vout
td (on)
10%
t r
t f
10%
90%
10%
90%
td (off)
90%
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相关代理商/技术参数 |
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| 2SK1345 | 制造商:Toshiba America Electronic Components 功能描述: |
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