参数资料
型号: 2SK1968
元件分类: JFETs
英文描述: 12 A, 600 V, 0.88 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: TO-3P, 3 PIN
文件页数: 10/12页
文件大小: 62K
代理商: 2SK1968
2SK1968
5
20
16
12
8
4
04
8
12
16
20
Gate to Source Voltage V
(V)
GS
Drain
to
Source
Saturation
Voltage
DS(on)
15 A
I
= 5 A
10 A
Pulse test
V
(V)
D
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
2
1
0.5
0.2
0.1
1
2
5
10
20
50
100
Drain Current
I
(A)
D
Static
Drain
to
Source
on
State
Resistance
R
(
)
DS(on)
V
= 10 V
Pulse test
GS
Static Drain to Source on State
Resistance vs. Drain Current
2.0
1.6
1.2
0.8
0.4
–40
0
40
80
120
160
Gate to Source Voltage V
(V)
GS
R
(
)
DS(on)
10 A
I
= 5 A
Pulse test
V
= 10 V
GS
Static
Drain
to
Source
on
State
Resistance
D
0
Static Drain to Source on State
Resistance vs. Temperature
50
20
10
5
2
1
0.5
0.1 0.2
0.5
1
2
5
10
Drain Current
I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
20
Pulse test
V
= 20 V
DS
Tc = –25°C
25°C
75°C
Forward Transfer Admittance vs.
Drain Current
相关PDF资料
PDF描述
2SK1971-E 35 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET
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