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参数资料
| 型号： | 2SK1968 |
| 元件分类： | JFETs |
| 英文描述： | 12 A, 600 V, 0.88 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 11/12页 |
| 文件大小： | 62K |
| 代理商： | 2SK1968 |
2SK1968
6
3000
2000
1000
500
200
100
0.1 0.2
0.5
1
2
5
10
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
t
(ns)
20
di/dt = 100 A/s
V
= 0, Ta = 25°C
GS
Body to Drain Diode Reverse
Recovery Time
rr
5000
2000
1000
500
200
100
50
20
10
Capacitance
C
(pF)
010
20
30
40
50
Drain to Source Voltage
V
(V)
DS
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
Typical Capacitance vs. Drain to
Source Voltage
1000
800
600
400
200
0
204060
80
100
Gate Charge
Qg
(nc)
Drain
to
Source
Voltage
V
(V)
DS
I
= 12 A
D
VGS
VDS
V
= 100 V
250 V
400 V
DD
V
= 400 V
250 V
100 V
DD
20
16
12
8
4
0
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
300
200
100
50
20
10
0.1 0.2
0.5
1
2
5
10
Drain Current
I
(A)
D
Switching
Time
t
(ns)
20
V
= 10 V, PW = 5
s
duty
1 %, V
30 V
GS
DD
td(off)
tf
td(on)
tr
Switching Characteristics
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PDF描述 |
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| 2SK1971-E | 35 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1971 | 35 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1985-01MR | 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F15 |
| 2SK1942-01 | 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P |
相关代理商/技术参数 |
参数描述 |
|---|---|
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| 2SK1983-01SC | 制造商:Fuji Electric 功能描述: |
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