参数资料
型号: 2SK2094
元件分类: JFETs
英文描述: 2 A, 60 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
文件页数: 1/5页
文件大小: 86K
代理商: 2SK2094
2SK2094
Transistors
Rev.A
1/4
4V Drive Nch MOS FET
2SK2094
Structure
External dimensions (Unit : mm)
Silicon N-channel MOS FET
CPT3
(1)Gate
(2)Drain
(3)Source
6.5
2.3
(2)
(3)
0.65
0.9
(1)
0.75
2.3
0.9
5.1
1.5
5.5
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
Abbreviated symbol : K2094
Features
1) Low On-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) 4V drive.
5) Drive circuits can be simple.
6) Parallel use is easy.
Applications
Switching
Packaging specifications
Inner circuit
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
TL
2500
2SK2094
Type
Package
Code
Basic ordering unit
(pieces)
Taping
Absolute maximum ratings (Ta=25
°C)
VDSS
VGSS
IDR
PD
Tch
60
V
A
W
°C
±20
2
ID
IDRP
A
IDP
A
8
2
8
10
150
Tstg
°C
55 to +150
Symbol
Limits
Unit
Parameter
Pw 300s, Duty cycle 2%
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Total power dissipation(Tc=25
°C)
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Pulsed
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相关代理商/技术参数
参数描述
2SK2094_1 制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive Nch MOS FET
2SK2094F5 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-252
2SK2094TL 功能描述:MOSFET POWER MOSFET SURF MOUNT RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2SK2095 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-220VAR
2SK2095N 功能描述:MOSFET N-CH 60V 10A TO-220FN RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件