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参数资料
| 型号： | 2SK2094 |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 60 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 3/5页 |
| 文件大小： | 86K |
| 代理商： | 2SK2094 |
2SK2094
Transistors
Rev.A
3/4
Electrical characteristics curve
0.1 0.2
0.5
1
2
5
10 20
50 100
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
Operation
in
this
area
is
limited
by
R
DS
(on)
Tc
=25°C
Single pulse
DRAIN
CURRENT
:
I
D
(A)
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Maximum Safe Operating Area
P
W =10ms
1ms
DC
Operation
5
4
3
2
1
0
4
3
2
1
0
10V
8V
6V
4V
VGS
=3V
Ta
=25
°C
Pulsed
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.2 Typical Output Characteristics
DRAIN
CURRENT
:
I
D
(A)
2
0
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
1
3
4
567
8
VDS
=10V
Pulsed
Ta
=125°C
75
°C
25°C
25
°C
GATE-SOURCE VOLTAGE : VGS (V)
Fig.3 Typical Transfer Characteristics
DRAIN
CURRENT
:
I
D
(A)
50
25
4
015
25
0.005 0.01 0.02
0.05 0.1 0.2
0.5
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
VGS
=10V
Pulsed
Ta
=125°C
75
°C
25°C
25
°C
DRAIN CURRENT : I D (A)
Fig.5 Static Drain-Source On-State Resistance
Fig.5 vs. Drain Current (
Ι )
STATIC
DRAIN-SOURCE
ON-STATE
RESISTANCE
:
R
DS(on)
(
)
0.005
0.2
2
5
10
0.01
5
0.05 0.1
0.5
1
0.5
0.2
0.1
0.05
0.01
0.02
1
2
VGS
=4V
Pulsed
Ta
=125°C
75
°C
25°C
25
°C
DRAIN CURRENT : I D (A)
Fig.6 Static Drain-Source On-State Resistance
Fig.6 vs. Drain Current (
ΙΙ )
STATIC
DRAIN-SOURCE
ON-STATE
RESISTANCE
:
R
DS(on)
(
)
0
3
2
1
0
25
50
75
100 125
VDS
=10V
lD
=1mA
GATE
THRESHOLD
VOLTAGE
:
V
GS(th)
(V
)
CHANNEL TEMPERATURE : Tch
(
°C)
Fig.4 Gate Threshold Voltage
Fig.4 vs. Channel Temperature
5
020
10
15
0
0.1
0.2
0.3
0.4
0.5
0.6
ID
=2A
1A
Ta
=25
°C
Pulsed
Fig.7 Static Drain-Source On-State Resistance
Fig.7 vs. Gate-Source Voltage
STATIC
DRAIN-SOURCE
ON-STATE
RESISTANCE
:
R
DS(on)
(
)
GATE-SOURCE VOLTAGE : VGS (V)
0
50
150
50
100
0
0.1
0.3
0.4
0.5
0.6
25
75
125
0.2
0.7
0.8
Pulsed
VGS
=10V
ID
=1A
Fig.8 Static Drain-Source On-State Resistance
Fig.8 vs. Channel Temperature
STATIC
DRAIN-SOURCE
ON-STATE
RESISTANCE
:
R
DS(on)
(
)
CHANNEL TEMPERATURE : Tch
(
°C)
25
0.005 0.01 0.02 0.05 0.1 0.2
0.5
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
VDS
=10V
Pulsed
Ta
= 25°C
25
°C
125
°C
75
°C
DRAIN CURRENT : I D (A)
Fig.9 Forward Transfer Admittance
Fig.9 vs. Drain Current
FORWARD
TRANSFER
ADMITTANCE
:
Y
fS
(S
)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2094_1 | 制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive Nch MOS FET |
| 2SK2094F5 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-252 |
| 2SK2094TL | 功能描述:MOSFET POWER MOSFET SURF MOUNT RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2095 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-220VAR |
| 2SK2095N | 功能描述:MOSFET N-CH 60V 10A TO-220FN RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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