参数资料
型号: 2SK2114
元件分类: JFETs
英文描述: 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: TO-220C, 3 PIN
文件页数: 2/7页
文件大小: 82K
代理商: 2SK2114
2SK2114
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
450
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
5
A
Drain peak current
ID(pulse)*
1
20
A
Body to drain diode reverse drain current
IDR
5
A
Channel dissipation
Pch*
2
35
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
450
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
±10
A
VGS =
±25 V, VDS = 0
Zero gate voltage drain current
IDSS
250
A
VDS = 360 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
3.0
V
ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
1.0
1.4
ID = 2.5 A, VGS = 10 V*
3
Forward transfer admittance
|yfs|
2.5
4.0
S
ID = 2.5 A, VDS = 10 V*
3
Input capacitance
Ciss
640
pF
Output capacitance
Coss
160
pF
Reverse transfer capacitance
Crss
20
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
10
ns
Rise time
tr
25
ns
Turn-off delay time
td(off)
50
ns
Fall time
tf
30
ns
ID = 2.5 A, VGS = 10 V,
RL = 12
Body to drain diode forward voltage
VDF
0.95
V
IF = 5 A, VGS = 0
Body to drain diode reverse
recovery time
trr
300
ns
IF = 5 A, VGS = 0,
diF / dt = 100 A /
s
Note:
3. Pulse Test
相关PDF资料
PDF描述
2SK2117-E 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2116-E 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2117 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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2SK2116 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相关代理商/技术参数
参数描述
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