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参数资料
| 型号： | 2SK2114 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220C, 3 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 82K |
| 代理商： | 2SK2114 |
2SK2114
Rev.2.00 Sep 07, 2005 page 4 of 6
5
40
160
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
4
1
0
80
120
0
2
3
Static Drain to Source on State
Resistance vs. Temperature
VGS = 10 V
Pulse Test
1 A
ID = 5 A
–40
2 A
10
0.2
5
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
5
0.5
0.1
0.5
2
0.1
1.0
2
Forward Transfer Admittance
vs. Drain Current
–25
°C
VDS = 20 V
Pulse Test
0.05
0.2
1.0
TC = 25°C
75
°C
5,000
0.5
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
2,000
200
0.2
1.0
10
50
500
1,000
Body to Drain Diode Reverse
Recovery Time
0.1
100
5
di/dt = 100 A/
s, Ta = 25°C
VGS = 0
Pulse Test
2
1,000
20
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
10
30
40
1
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
0
Ciss
Coss
Crss
500
16
40
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
400
100
824
32
0
200
300
VDS
100 V
20
16
4
0
8
12
VDD = 100 V
250 V
400 V
ID = 5 A
250 V
VDD = 400 V
VGS
Gate
to
Source
Voltage
V
GS
(V)
0.5
10
Drain Current ID (A)
Switching
Time
t
(ns)
500
50
0.2
1.0
5
10
100
200
VGS = 10 V VDD = 30 V
PW = 2
s, duty < 1%
0.1
20
2
Switching Characteristics
tf
5
td (on)
tr
td (off)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2117-E | 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2116-E | 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2117 | 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2116 | 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2116 | 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2115 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SK2116 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2117 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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