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参数资料
| 型号： | 2SK2114 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220C, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 82K |
| 代理商： | 2SK2114 |
2SK2114
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
10
20
50
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
8
2
10
30
40
0
4
6
5.0 V
4.5 V
VGS = 4 V
5.5 V
6 V
10 V
Pulse Test
10
410
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
8
2
26
8
–25
°C
0
4
6
VDS = 20 V
Pulse Test
75
°C
TC = 25°C
10
820
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
8
2
412
16
0
4
6
ID = 1 A
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2 A
Pulse Test
5 A
10
250
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
5
0.1
1.0
5
20
0.5
1.0
2
Static Drain to Source on State
Resistance vs. Drain Current
VGS = 10 V
Pulse Test
0.2
10
15 V
0.5
60
40
20
50
100
150
0
10
1
0.2
0.05
10
100
1,000
5
0.5
0.1
1
3
30
300
Ta = 25
°C
10
s
100
s
1 ms
DC
Opera
tion
(T
C =
25
°C)
PW
=
10
m
s (1
Shot)
Operation in this Area
is Limited by R
DS (on)
20
50
2
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2117-E | 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2116-E | 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2117 | 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2116 | 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2116 | 7 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2115 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SK2116 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2117 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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