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参数资料
| 型号： | 2SK2202 |
| 元件分类： | JFETs |
| 英文描述： | 0.55 ohm, POWER, FET |
| 封装： | TO-220FM, 3 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 45K |
| 代理商： | 2SK2202 |
2SK2202
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
120
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
AV
DS = 100 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.3
0.4
I
D = 4 A
V
GS = 10 V*
1
—
0.35
0.55
I
D = 4 A
V
GS = 4 V*
1
Forward transfer admittance
|y
fs|
3.0
5.0
—
S
I
D = 4 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
420
—
pF
V
DS = 10 V
Output capacitance
Coss
—
140
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
35
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—9
—ns
I
D = 4 A
Rise time
t
r
—
50
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
140
—
ns
R
L = 7.5
Fall time
t
f
—65—ns
Body to drain diode forward
voltage
V
DF
—
1.35
—
V
I
F = 7 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
320
—
ns
I
F = 7 A, VGS = 0,
di
F / dt = 50 A / s
Note
1. Pulse Test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2202-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2203 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2204(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 45A I(D) | TO-262AA |
| 2SK2204(S) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 45A I(D) | TO-263AB |
| 2SK2204L | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
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