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参数资料
| 型号： | 2SK2210 |
| 厂商： | PANASONIC CORP |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 750 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220E |
| 封装： | TO-220E, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 201K |
| 代理商： | 2SK2210 |
Power F-MOS FETs
2SK2210
2SK2210
Silicon N-Channel Power F-MOS
s Features
q Avalanche energy capability guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
s Applications
q Non-contact relay
q Solenoid drive
q Motor drive
q Control equipment
q Switching mode regulator
s Absolute Maximum Ratings (Tc = 25C)
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC
Pulse
Avalanche energy capability
Allowable power
TC= 25C
dissipation
Ta= 25C
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP
EAS *
PD
Tch
Tstg
Rating
750
±30
±4
±8
40
50
2
150
–55 to +150
Unit
V
A
mJ
W
C
s Electrical Characteristics (Tc = 25C)
Parameter
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Diode forward voltage
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Channel-Case heat resistance
Channel-Atmosphere heat resistance
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on)
| Yfs |
VDSF
Ciss
Coss
Crss
td(on)
tr
tf
td(off)
Rth(ch-c)
Rth(ch-a)
Condition
VDS= 600V, VGS= 0
VGS= ±30V, VDS= 0
ID=1mA, VGS= 0
VDS= 25V, ID=1mA
VGS=10V, ID= 2A
VDS= 25V, ID= 2A
IDR=4A, VGS= 0
VDS= 20V, VGS= 0, f=1MHz
VDD= 200V, ID= 2A
VGS=10V, RL=100
Min
750
2
1.3
Typ
1.8
2.2
600
105
45
25
50
65
170
Max
10
±1
4
2.4
–1.6
2.5
62.5
Unit
A
V
S
V
pF
ns
C/W
Unit : mm
1 : Gate
2 : Drain
3 : Source
TO-220E Package
* L= 5mH, IL= 4A, 1 pulse
9.9
±0.3
23
1
4.6
±0.2
2.9
±0.2
2.6
±0.1
2.54
±0.2
0.75
±0.1
1.2
±0.15
5.08
±0.4
15.0
±0.3
13.7
+0.5
-0.2
3.2
±0.1
3.0
±0.2
8.0
±0.2
4.1
±0.2
Solder
Dip
1.45
±0.15
0.7
±0.1
7
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
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|---|---|
| 2SK2211 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon N-Channel MOSFET |
| 2SK221100L | 功能描述:MOSFET N-CH 30V 1A MINI-PWR RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2212 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2212-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2213-01 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
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