参数资料
型号: 2SK2499
元件分类: JFETs
英文描述: 50 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件页数: 1/8页
文件大小: 124K
代理商: 2SK2499
MOS FIELD EFFECT TRANSISTORS
DESCRIPTION
The 2SK2499 is N-Channel MOS Field Effect Transistor de-
signed for high current switching applications.
FEATURES
Low On-Resistance
RDS(on)1 = 9 m
(VGS = 10 V, ID = 25 A)
RDS(on)2 = 14 m
(VGS = 4 V, ID = 25 A)
Low Ciss
Ciss = 3 400 pF TYP.
High Avalanche Capability.
Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±50
A
Drain Current (pulse)*
ID(pulse)
±200
A
Total Power Dissipation (Tc = 25 C)
PT1
75
W
Total Power Dissipation (TA = 25 C)
PT2
1.5
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150 C
Single Avalanche Current**
IAS
50
A
Single Avalanche Energy**
EAS
250
mJ
*
PW
≤ 10
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 C, RG = 25
, VGS = 20 V → 0
2SK2499, 2SK2499-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DIMENSIONS
(in millimeters)
10.6 MAX.
10.0
3.0
±
0.3
3.6 ± 0.2
5.9
MIN.
15.5
MAX.
6.0
MAX.
12.7
MIN.
1.3 ± 0.2
0.75 ± 0.1
2.54
4.8 MAX.
1.3 ± 0.2
0.5 ± 0.2
2.8 ± 0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
(10.0)
4.8 MAX.
MP-25 (TO-220)
1.3 ± 0.2
0.5 ± 0.2
(0.5R)
(0.8R)
4
12 3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
12 3
(2.54) (2.54)
1.4 ± 0.2
8.5
±
0.2
1.1
±
0.4
3.0
±
0.5
2.8
±
0.2
1.5
MAX.
1.0
±
0.5
4
MP-25Z (SURFACE MOUNT TYPE)
1.0 ± 0.3
Body
Diode
Source
Drain
Gate
Gate Protection Diode
Document No. D10045EJ1V0DS00 (1st edition)
Date Published May 1995 P
Printed in Japan
1995
DATA SHEET
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相关代理商/技术参数
参数描述
2SK2499(AZ) 制造商:Renesas Electronics Corporation 功能描述:
2SK2499-Z 制造商:Renesas Electronics Corporation 功能描述:
2SK2499-Z-AZ 制造商:Renesas Electronics Corporation 功能描述:
2SK24C 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 1.5MA I(DSS) | CAN
2SK24D 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40V V(BR)DSS | 3MA I(DSS) | CAN