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参数资料
| 型号： | 2SK2504TL |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 100 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CPT3, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 89K |
| 代理商： | 2SK2504TL |
2SK2504
Transistors
Rev.A
3/5
Electrical characteristics curve
1
200
100
50
510
50
10
5
0.5
1
0.1
Tc
=25°C
Single pulse
DRAIN
CURRENT
:
I
D
(A)
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Maximum Safe Operating Area
DC
Operation
P
W
=10ms
1ms
100
s
Operation
in
this
area
is limited
by
R
DS(on)
5
4
3
2
1
2
4
6
8
10
1
3
5
7
9
0
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.2 Typical Output Characteristics
DRAIN
CURRENT
:
I
D
(A)
VGS
=3V
4V
10V
8V
6V
5V
Ta
=25
°C
Pulsed
5
10
2
1
0.5
0.2
0.1
0.05
0.02
0.01
VDS
=10V
Pulsed
Ta
=125°C
75
°C
25°C
25
°C
Fig.3 Typical Transfer Characteristics
DRAIN
CURRENT
:
I
D
(A)
2
01
3
4
5
6
GATE-SOURCE VOLTAGE : VGS (V)
50
25
4.0
0
150
3.0
2.0
1.0
3.5
2.5
1.5
0.5
0
25
50
75
100 125
GATE
THRESHOLD
VOLTAGE
:
V
GS(th)
(V)
CHANNEL TEMPERATURE : Tch
(
°C)
Fig.4 Gate Threshold Voltage
vs. Channel Temperature
VDS
=10V
lD
=1mA
Pulsed
VGS
=10V
10
0.01
10
0.1
1
0.1
0.01
1
Ta
=125°C
75
°C
25°C
25
°C
DRAIN CURRENT : I D (A)
Fig.5 Static Drain-Source On-State Resistance
vs. Drain Current (
Ι )
STATIC
DRAIN-SOURCE
ON-STATE
RESISTANCE
:
R
DS(on)
(
)
Pulsed
VGS
=4V
0.2
10
0.01
5.0
10
0.05 0.1
0.5
1
2
5
0.1
0.2
0.5
0.01
0.05
0.02
1.0 2.0
Ta
=125°C
75
°C
25°C
25
°C
DRAIN CURRENT : I D (A)
Fig.6 Static Drain-Source On-State Resistance
vs. Drain Current (
ΙΙ )
STATIC
DRAIN-SOURCE
ON-STATE
RESISTANCE
:
R
DS(on)
(
)
10
15
0.6
0
5
0.4
0.2
20
Ta
=25°C
Pulsed
GATE-SOURCE VOLTAGE : VGS (V)
Fig.7 Static Drain-Source On-State Resistance
vs. Gate-Source Voltage
STATIC
DRAIN-SOURCE
ON-STATE
RESISTANCE
:
R
DS(on)
(
)
lD
=5A
2.5A
0
0.1
0.3
0.4
0.5
25
50
25
50
0
75
100
125 150
0.2
0.6
Pulsed
VGS
=10V
Fig.8 Static Drain-Source On-State Resistance
vs. Channel Temperature
STATIC
DRAIN-SOURCE
ON-STATE
RESISTANCE
:
R
DS(on)
(
)
CHANNEL TEMPERATURE : Tch
(
°C)
ID
=5A
2.5A
1
10
100
0.1 0.2
0.5
0.01 0.02 0.05
1
2.0
5.0
10
Pulsed
VDS
=10V
Ta
= 25°C
25
°C
75
°C
125
°C
0.1
0.2
0.5
2
5
20
50
DRAIN CURRENT : I D (A)
Fig.9 Forward Transfer Admittance
vs. Drain Current
FORWARD
TRANSFER
ADMITTANCE
:
Y
fS
(S)
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