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参数资料
| 型号： | 2SK2504TL |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 100 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CPT3, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 89K |
| 代理商： | 2SK2504TL |
2SK2504
Transistors
Rev.A
4/5
0.05
0.1
0.2
0.5
1
2
5
10
0
0.5
1.0
1.5
VGS
=0V
Pulsed
Ta
=125°C
75
°C
25°C
25
°C
Fig.10 Reverse Drain Current
vs. Source-Drain Voltage (
Ι )
REVERSE
DRAIN
CURRENT
:
I
DR
(A)
SOURCE-DRAIN VOLTAGE : VSD (V)
5
1
0.5
0
1.0
1.5
0.01
0.05
0.1
0.5
REVERSE
DRAIN
CURRENT
:
I
DR
(A)
VGS
=10V
0V
Ta
=25°C
Pulsed
Fig.11 Reverse Drain Current
vs. Source-Drain Voltage (
ΙΙ )
SOURCE-DRAIN VOLTAGE : VSD (V)
10000
1000
100
10
0.1
1
10
100
VGS
=0V
f
=1MHz
Ta
=25
°C
Ciss
Coss
Crss
Fig.12 Typical Capacitance
vs. Drain-Source Voltage
CAPACITANCE
:
C
(pF)
DRAIN-SOURCE VOLTAGE : VDS (V)
2
5
10
20
50
100
200
500
1000
0.1
0.05
0.2
0.5
1
2
5
10
SWITCHING
TIME
:
t
(ns)
DRAIN CURRENT : I D
(A)
Fig.13
Switching characteristics
(See Figures 16 and 17 for
the measurement circuit and
resultant waveforms)
Ta
=25°C
VDD
=30V
VGS
=10V
RG
=10
Pulsed
td(on)
tr
td(off)
tf
10
0.2
0.5
500
1000
100
50
12
5
1
REVERSE
RECOVERY
TIME
:
trr
(ns)
REVERSE DRAIN CURRENT : IDR
(A)
0
Fig.14 Reverse Recovery Time
vs. Reverse Drain Current
0.1
Ta
=25°C
di/dt
=100A/s
VGS
=0V
Pulsed
NORMALIZED
TRANSIENT
THERMAL
RESISTANCE
:r
(
t
)
PULSE WIDTH : PW
(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
10
100
1m
10m
100m
1
10
1
0.1
0.01
0.001
0.02
0.05
0.1
D=1
0.2
0.5
Tc=25
°C
θth(ch-c) (t)=r (t) θth(ch-c)
θth(ch-c)=6.25°C/W
PW
T
D=PW
T
Single pulse
0.01
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2507 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 50V 25A 3PIN TO-220(NIS) - Rail/Tube |
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