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参数资料
| 型号： | 2SK2586-E |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 7/10页 |
| 文件大小： | 104K |
| 代理商： | 2SK2586-E |
2SK2586
Rev.5.00 Sep 07, 2005 page 4 of 7
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Forward Transfer Admittance
vs. Drain Current
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
Gate
to
Source
Voltage
V
GS
(V)
Drain Current ID (A)
Switching
Time
t
(ns)
Switching Characteristics
0.04
0.032
0.024
0.016
0.008
–40
0
40
80
120
160
0
Pulse Test
ID = 50 A
VGS = 4 V
10 V
10, 20 A
10, 20, 50 A
0.1
0.3
1
3
10
30
100
VDS = 10 V
Pulse Test
500
100
200
20
50
10
2
5
1
0.5
25
°C
Tc = –25
°C
75
°C
0.1
0.3
1
3
10
30
100
5000
2000
1000
200
500
100
20
50
10
5
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
010
20
30
40
50
10000
2000
5000
1000
100
200
500
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
100
80
60
40
20
0
20
16
12
8
4
40
80
120
160
200
0
VDD = 10 V
25 V
50 V
ID = 50 A
VGS
VDS
VDD = 50 V
25 V
10 V
5000
2000
1000
200
500
100
20
10
50
5
0.1
0.3
1
3
10
30
100
VGS = 10 V, VDD = 30 V
PW = 5
s, duty < 1 %
tf
tr
td(on)
td(off)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2588 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK258H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-3 |
| 2SK2590 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2590-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2591 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
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