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参数资料
| 型号： | 2SK2591 |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-220CFM, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 22K |
| 代理商： | 2SK2591 |
2SK2591
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
500
V
Gate to source voltage
V
GSS
±30
V
Drain current
I
D
8A
Drain peak current
I
D(pulse)*
1
32
A
Body to drain diode reverse drain current
I
DR
8A
Channel dissipation
Pch*
2
35
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
500
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±30
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage drain current
I
DSS
—
–250
A
V
DS = 500 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
–3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.45
0.60
I
D = 4 A
V
GS = 10 V*
1
Forward transfer admittance
|y
fs|
5.0
7.5
—
S
I
D = 4 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
1450
—
pF
V
DS = 10 V VGS = 0
f = 1 MHz
Output capacitance
Coss
—
410
—
pF
Reverse transfer capacitance
Crss
—
55
—
pF
Turn-on delay time
t
d(on)
—20
—
ns
I
D = 4 A
V
GS = 10 V
R
L = 5
Rise time
t
r
—55
—
ns
Turn-off delay time
t
d(off)
—
130
—
ns
Fall time
t
f
—50
—
ns
Body to drain diode forward
voltage
V
DF
—
0.9
—
V
I
F = 8 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
380
—
ns
I
F = 8 A, VGS = 0,
diF / dt = 100 A /
s
Note
1. Pulse Test
See characteristics curves of 2SK1166.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2592 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 13A I(D) | TO-262AA |
| 2SK2593 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon N-Channel Junction FET |
| 2SK2593GQL | 功能描述:JFET N-CH 55V 30MA SSMINI-3 RoHS:是 类别:分离式半导体产品 >> JFET（结点场效应 系列:- 标准包装:8,000 系列:- 电流 - 漏极(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏极至源极电压(Vdss):30V 漏极电流 (Id) - 最大:10mA FET 型:N 沟道 电压 - 击穿 (V(BR)GSS):- 电压 - 切断 (VGS 关）@ Id:180mV @ 1µA 输入电容 (Ciss) @ Vds:4pF @ 10V 电阻 - RDS（开）:200 欧姆 安装类型:表面贴装 包装:带卷 (TR) 封装/外壳:3-XFDFN 供应商设备封装:3-ECSP1006 功率 - 最大:100mW |
| 2SK2593JQL | 功能描述:JFET N-CH 55V 30MA SSMINI-3 RoHS:是 类别:分离式半导体产品 >> JFET（结点场效应 系列:- 标准包装:8,000 系列:- 电流 - 漏极(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏极至源极电压(Vdss):30V 漏极电流 (Id) - 最大:10mA FET 型:N 沟道 电压 - 击穿 (V(BR)GSS):- 电压 - 切断 (VGS 关）@ Id:180mV @ 1µA 输入电容 (Ciss) @ Vds:4pF @ 10V 电阻 - RDS（开）:200 欧姆 安装类型:表面贴装 包装:带卷 (TR) 封装/外壳:3-XFDFN 供应商设备封装:3-ECSP1006 功率 - 最大:100mW |
| 2SK2593P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 55V V(BR)DSS | 1MA I(DSS) | SC-75A |
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