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参数资料
| 型号： | 2SK2595 |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF POWER, FET |
| 封装： | RP8P, 2 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 36K |
| 代理商： | 2SK2595 |
2SK2595
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
17
V
Gate to source voltage
V
GSS
±10
V
Drain current
I
D
1.1
A
Drain peak current
I
D(pulse)*
1
5A
Channel dissipation
Pch*
2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–45 to +150
°C
Notes: 1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min.
Typ
Max.
Unit
Test Conditions
Zero gate voltage drain
current
I
DSS
——
10
AV
DS = 12 V, VGS = 0
Gate to source leak current
I
GSS
——
±5.0
AV
GS = ±10V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
0.6
—
1.3
V
I
D = 6mA, VDS = 12V
Input capacitance
Ciss
—
68
—
pF
V
GS = 5V, VDS = 0
f = 1MHz
Output capacitance
Coss
—
27
—
pF
V
DS = 12V, VGS = 0
f = 1MHz
Output Power
Pout
37.3
38.45
—
dBm
V
DS = 12V,
f = 836.5MHz
Pin = 29.5dBm
Drain Rational
ηD50
60
—
%
V
DS = 12V
Pout = 37.3dBm
f = 836.5MHz
Pin = 29.5dBm
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PDF描述 |
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| 2SK2595 | RF POWER, FET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2596 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596_07 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596BX | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596BXTL-E | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH - Bulk |
| 2SK2597 | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
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