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参数资料
| 型号： | 2SK2595 |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF POWER, FET |
| 封装： | RP8P, 2 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 36K |
| 代理商： | 2SK2595 |
2SK2595
4
0.1
10
2
1
5
0.2
0.5
0.1
0.02
0.05
0.01
0.1
0.2
0.5
12
5
10
Tc = –25
°C
25
°C
75
°C
1.2
1.0
0.8
0.6
0.4
0.2
–25
0
25
50
75
100
125
1 mA
10 mA
I
= 0.1
mA
D
V
= 12 V
DS
70
–10
–6
–2
2
6
10
50
60
V
= 0
f = 1 MHz
DS
100
20
10
50
0.1 0.2
0.5
1
2
5
10 20
50
V
= 0
f = 1 MHz
GS
Drain to Source Saturation Voltage
vs. Drain Current
Drain Current I
(A)
D
Ambient Temperature Ta (
°C)
Gate
to
Source
Cutoff
Voltage
Gate to Source Cutoff Voltage vs.
Ambient Temperature
GS(off)
GS
Input Capacitance vs.
Gate to Source Voltage
Gate to Source Voltage V
(V)
Input
Capacitance
Ciss
(pF)
DS
Drain to Source V
(V)
Output
Capacitance
Coss
(pF)
Drain
to
Source
Saturation
Voltage
DS(sat)
V
(V)
V
= 10 V
Pulse Test
DS
V
(V)
Output Capacitance vs.
Drain to Source Voltage
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2595 | RF POWER, FET |
| 2SK2596 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK2596 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK2598(2-10S1B) | 13 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2606 | 8 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2596 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596_07 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596BX | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596BXTL-E | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH - Bulk |
| 2SK2597 | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
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