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参数资料
| 型号： | 2SK2595 |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF POWER, FET |
| 封装： | RP8P, 2 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 36K |
| 代理商： | 2SK2595 |
2SK2595
3
Main Characteristics
32
24
16
8
0
50
100
150
200
10
8
6
4
2
0
24
6
8
10
4 V
3 V
V
= 2 V
GS
5 V
6 V
10
V
8 V
5
4
3
2
1
0
1
2
345
Tc = –25
°C
25
°C
75
°C
0.1
10
2
5
1
0.2
0.5
0.1
Tc = –25
°C
25
°C
75
°C
0.2
0.5
12
5
10
Channel
Power
Dissipation
Pch
(W)
Case Temperature
Tc (
°C)
Maximum Channel Power
Dissipation Curve
Drain to Source Voltage V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Pulse Test
V
= 12 V
Pulse Test
DS
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance
vs. Drain Current
V
= 12 V
Pulse Test
DS
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2595 | RF POWER, FET |
| 2SK2596 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK2596 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK2598(2-10S1B) | 13 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2606 | 8 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2596 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596_07 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596BX | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK2596BXTL-E | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH - Bulk |
| 2SK2597 | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
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