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参数资料
| 型号： | 2SK2728-E |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 500 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 190K |
| 代理商： | 2SK2728-E |
2SK2728
Rev.4.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
18
A
Drain peak current
ID(pulse)*
1
72
A
Body to drain diode reverse drain current
IDR
18
A
Avalanche current
IAP*
3
18
A
Avalanche energy
EAR*
3
18
mJ
Channel dissipation
Pch*
2
150
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
500
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±25 V, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 500 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.5
—
3.5
V
ID = 1 mA, VDS = 10V*
4
Static drain to source on state
resistance
RDS(on)
—
0.38
0.45
ID = 9 A, VGS = 10 V*
4
Forward transfer admittance
|yfs|
8
13
—
S
ID = 9 A, VDS = 10 V*
4
Input capacitance
Ciss
—
2150
—
pF
Output capacitance
Coss
—
630
—
pF
Reverse transfer capacitance
Crss
—
100
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Total gate charge
Qg
—
38
—
nc
Gate to source charge
Qgs
—
10
—
nc
Gate to drain charge
Qgd
—
13
—
nc
VDD = 400 V, VGS = 10 V,
ID = 18 A
Turn-on delay time
td(on)
—
35
—
ns
Rise time
tr
—
120
—
ns
Turn-off delay time
td(off)
—
100
—
ns
Fall time
tf
—
65
—
ns
VGS = 10 V, ID = 9 A,
RL = 3.3
Body to drain diode forward voltage
VDF
—
1.0
—
V
ID = 18A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
380
—
ns
IF = 18A, VGS = 0
diF/ dt = 100 A/
s
Note:
4. Pulse test
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