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参数资料
| 型号： | 2SK2728-E |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 500 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-65, TO-3P, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 190K |
| 代理商： | 2SK2728-E |
2SK2728
Rev.4.00 Sep 07, 2005 page 4 of 7
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Forward Transfer Admittance
vs. Drain Current
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
Gate
to
Source
Voltage
V
GS
(V)
Drain Current ID (A)
Switching
Time
t
(ns)
Switching Characteristics
2.0
1.6
1.2
0.8
0.4
–40
0
40
80
120
160
0
0.1 0.2
1
2
10 20
50
10
20
2
5
1
0.2
0.5
0.1
0.5
5
Pulse Test
ID = 18 A
VGS = 10 V
10 A
5 A
25
°C
Tc = –25
°C
75
°C
VDS = 10 V
Pulse Test
0.1
0.3
1
3
10
30
100
1000
200
500
100
20
50
10
di / dt = 100 A /
s
VGS = 0, Ta = 25°C
010
20
30
40
50
2000
5000
1000
100
200
500
400
300
200
100
0
20
16
12
8
4
0
1000
200
500
100
20
10
50
0.1
0.3
1
3
10
30
100
20
50
10
5
VDD = 100 V
250 V
400 V
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
VDD = 400 V
250 V
100 V
ID = 18 A
VDS
VGS
tf
tr
td(on)
td(off)
VGS = 10 V, VDD = 30 V
PW = 10
s, duty < 1 %
20
40
60
80
100
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2728 | 0.45 ohm, POWER, FET |
| 2SK2728 | 18 A, 500 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2729 | 0.29 ohm, POWER, FET |
| 2SK2735L | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2735S | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2729(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2730-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box 制造商:Renesas 功能描述:Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box |
| 2SK2731T146 | 功能描述:MOSFET N-CH 30V 200MA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2733(F) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 900V 1A 3-Pin(3+Tab) TO-220 |
| 2SK2735L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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