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参数资料
| 型号： | 2SK2744 |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 50 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 2-16C1B, SC-65, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 116K |
| 代理商： | 2SK2744 |
2SK2744
2004-07-01
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
A
Drain cut-off current
IDSS
VDS = 50 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
50
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.5
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 25 A
15
20
m
Forward transfer admittance
Yfs
VDS = 10 V, ID = 25 A
15
27
S
Input capacitance
Ciss
2300
pF
Reverse transfer capacitance
Crss
420
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1200
pF
Rise time
tr
30
Turn-on time
ton
45
Fall time
tf
80
Switching time
Turn-off time
toff
Duty <= 1%, tw = 10 s
230
ns
Total gate charge
(gate-source plus gate-drain)
Qg
68
nC
Gate-source charge
Qgs
20
nC
Gate-drain (“miller”) charge
Qgd
VDD 40 V, VGS = 10 V, ID = 45 A
48
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
45
A
Pulse drain reverse current
(Note 1)
IDRP
180
A
Forward voltage (diode)
VDSF
IDR = 45 A, VGS = 0 V
1.8
V
Reverse recovery time
trr
130
ns
Reverse recovery charge
Qrr
IDR = 45 A, VGS = 0 V
dIDR/dt = 50 A/s
0.3
C
Marking
0 V
10 V
VGS
R
L
=1.
0
VDD 25 V
ID = 25 A
VOUT
4.
7
K2744
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2744(F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 50V 45A TO-3PN |
| 2SK2744F | 制造商:Toshiba America Electronic Components 功能描述:MOSFET |
| 2SK2745 | 功能描述:MOSFET N-CH 50V 50A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2745(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 50V 50A 3-Pin (3+Tab) TO-3PN 制造商:Toshiba 功能描述:Trans MOSFET N-CH 50V 50A 3-Pin (3+Tab) TO-3PN Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 50V 50A TO-3PN |
| 2SK2746 | 功能描述:MOSFET N-CH 800V 7A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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