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参数资料
| 型号： | 2SK2826-ZJ-AZ |
| 元件分类： | JFETs |
| 英文描述： | 70 A, 60 V, 0.0097 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | MP-25ZJ, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 80K |
| 代理商： | 2SK2826-ZJ-AZ |
Data Sheet D11273EJ3V0DS
2
2SK2826
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 35 A
20
94
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 35 A
5.5
6.5
m
RDS(on)2
VGS = 4.0 V, ID = 35 A
7.0
9.7
m
Input Capacitance
Ciss
VDS = 10 V
7200
pF
Output Capacitance
Coss
VGS = 0 V
2000
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
700
pF
Turn-on Delay Time
td(on)
ID = 35 A
100
ns
Rise Time
tr
VGS = 10 V
1200
ns
Turn-off Delay Time
td(off)
VDD = 30 V
440
ns
Fall Time
tf
RG = 10
520
ns
Total Gate Charge
QG
ID = 70 A
150
nC
Gate to Source Charge
QGS
VDD = 48 V
20
nC
Gate to Drain Charge
QGD
VGS = 10 V
40
nC
Body Diode Forward Voltage
VF(S-D)
IF = 70 A, VGS = 0 V
0.97
V
Reverse Recovery Time
trr
IF = 70 A, VGS = 0 V
80
ns
Reverse Recovery Charge
Qrr
di/dt = 100A/
s
250
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
10%
0
ID
90%
td(on)
tr td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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