- 您现在的位置：买卖IC网 > PDF目录30614 > 2SK2826-ZJ-AZ 70 A, 60 V, 0.0097 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB PDF资料下载
参数资料
| 型号： | 2SK2826-ZJ-AZ |
| 元件分类： | JFETs |
| 英文描述： | 70 A, 60 V, 0.0097 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | MP-25ZJ, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 80K |
| 代理商： | 2SK2826-ZJ-AZ |
Data Sheet D11273EJ3V0DS
4
2SK2826
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
0.4
0.6
0.8
40
100
80
60
0.2
Pulsed
VGS =10 V
20
VGS = 4.0 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
0
10
30
20
30
Pulsed
20
TA = 25C
ID = 35 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
10
20
30
100
1000
Pulsed
0
VGS = 10 V
VGS = 4.0 V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
-
Gate
Cut-off
Voltage
-
V
0.5
VDS = 10 V
ID = 1 mA
1.0
1.5
2.0
- 50
0
50
100
150
0
200
Tch - Channel Temperature - C
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
1
10
100
1000
Pulsed
02
4
TA = –25C
25C
75C
125C
68
VDS = 10 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|
y
fs
|
-
Forward
Transfer
Admittance
-
S
VDS=10V
Pulsed
0.1
1.0
10
100
10
100
0.1
1.0
TA = 175C
75C
25C
–25C
VGS = 0V
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2844 | 35 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2851 | 5000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 2SK2858-A | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2858 | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2859 | 2 A, 100 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2827-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK2835TP | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 200V 5A 3PIN TPS - Tape and Reel |
| 2SK2837 | 功能描述:MOSFET N-CH 500V 20A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2837(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-3PN 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 20A 3PIN 2-16C1C - Rail/Tube 制造商:Toshiba 功能描述:Nch 500V 20A 0.27@10V TO3P(N) Bulk |
| 2SK2837(Q,T) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-3PN T/R 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 20A TO-3PN |
发布紧急采购，3分钟左右您将得到回复。