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参数资料
| 型号： | 2SK2912S-E |
| 元件分类： | JFETs |
| 英文描述： | 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LDPAK-3 |
| 文件页数： | 7/14页 |
| 文件大小： | 76K |
| 代理商： | 2SK2912S-E |
Cautions
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Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
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相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2912S | 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2912STL-E | 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK291PRF | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK291TRF | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK291QRR | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2914 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 250V 7.5A 3PIN TO-220 - Rail/Tube |
| 2SK2914(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 250V 7.5A 3-Pin (3+Tab) TO-220AB 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 7.5A TO-220AB |
| 2SK2915 | 功能描述:MOSFET N-CH 600V 16A TO-3PN RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK2915(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-3PN Bulk |
| 2SK2915(Q,T) | 功能描述:MOSFET MOSFET N-Ch 600V 16A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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