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参数资料
| 型号： | 2SK2958(S) |
| 元件分类： | JFETs |
| 英文描述： | 0.014 ohm, POWER, FET |
| 封装： | LDPAK-3 |
| 文件页数： | 6/11页 |
| 文件大小： | 59K |
| 代理商： | 2SK2958(S) |
2SK2958(L),2SK2958(S)
4
0
48
12
16
20
16
12
8
4
–40
0
40
80
120
160
0
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(m
)
W
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
V
= 4 V
GS
10 V
Pulse Test
R
(m
)
W
DS(on)
0.5
0.4
0.3
0.2
0.1
Pulse Test
I
= 50 A
D
20 A
10 A
1
30
100
3
50
2
5
1
10
1000
300
20
10
V
= 4 V
GS
10 V
Pulse Test
10, 20 A
I
= 50 A
D
20 A
10 A
50 A
0.1
0.3
1
3
10
30
100
500
100
200
20
50
10
2
5
1
0.5
Tc = –25 °C
75 °C
25 °C
V
= 10 V
Pulse Test
DS
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2958(L) | 0.014 ohm, POWER, FET |
| 2SK2961 | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 2SK2967 | 30 A, 250 V, 0.068 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2980ZZ-TL-E | 1000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK2981-Z | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2959-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-220AB Box |
| 2SK296 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK2961 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-92 |
| 2SK2961(F) | 制造商:Toshiba 功能描述:Nch 60V 2A 0.27@10V TO92MOD Bulk 制造商:Toshiba 功能描述:Trans MOSFET N-CH 60V 2A 3-Pin TO-92 Mod |
| 2SK2961(F,M) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 60V 2A 3-Pin TO-92 Mod 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 60V 2A TO-92 |
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