参数资料
型号: 2SK2961
元件分类: 小信号晶体管
英文描述: 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封装: LEAD FREE, 2-5J1C, TO-92MOD, 3 PIN
文件页数: 1/6页
文件大小: 381K
代理商: 2SK2961
2SK2961
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
πMOSV)
2SK2961
Relay Drive, Motor Drive and DCDC Converter
Application
Low drainsource ON resistance
: RDS (ON) = 0.2 (typ.)
High forward transfer admittance
: |Yfs| = 2.0 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 60 V)
Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
2.0
Drain current
Pulse (Note 1)
IDP
6.0
A
Drain power dissipation
PD
0.9
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
Rth (cha)
138
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1C
Weight: 0.36 g (typ.)
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