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参数资料
| 型号： | 2SK2961 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | LEAD FREE, 2-5J1C, TO-92MOD, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 381K |
| 代理商： | 2SK2961 |
2SK2961
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
μA
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VGS = 4 V, ID = 1.0 A
—
0.26
0.38
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 1.0 A
—
0.20
0.27
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 1.0 A
1.0
2.0
—
S
Input capacitance
Ciss
—
170
—
Reverse transfer capacitance
Crss
—
25
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
75
—
pF
Rise time
tr
—
10
—
Turnon time
ton
—
15
—
Fall time
tf
—
50
—
Switching time
Turnoff time
toff
—
170
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
5.8
—
Gatesource charge
Qgs
—
4.1
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 2 A
—
1.7
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse
current
(Note 1)
IDR
—
2.0
A
Pulse drain reverse current
(Note 1)
IDRP
—
6.0
A
Forward voltage (diode)
VDSF
IDR = 2 A, VGS = 0 V
—
1.5
V
Reverse recovery time
trr
—
45
—
ns
Reverse recovery charge
Qrr
IDR = 2 A, VGS = 0 V, dIDR / dt = 50 A / μs
—
40.5
—
nC
Marking
K2961
Lot No.
Note 2
Part No.
(or abbreviation code)
Note 2: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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PDF描述 |
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| 2SK2981-Z | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2961(F) | 制造商:Toshiba 功能描述:Nch 60V 2A 0.27@10V TO92MOD Bulk 制造商:Toshiba 功能描述:Trans MOSFET N-CH 60V 2A 3-Pin TO-92 Mod |
| 2SK2961(F,M) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 60V 2A 3-Pin TO-92 Mod 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 60V 2A TO-92 |
| 2SK2961(TE6,F,M) | 功能描述:MOSFET N-ch 60V 2A 0.27 ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2961(TE6,M) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 60V 2A 3PIN TO-92 MOD - Tape and Reel |
| 2SK2961TPE6 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 60V 2A 3PIN L-STM - Tape and Reel |
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