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参数资料
| 型号： | 2SK3000 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MPAK-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 119K |
| 代理商： | 2SK3000 |
2SK3000
Rev.3.00, Jun.16.2004, page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
40
—
60
V
ID = 100
A, VGS = 0
Drain to source voltage
VDS(SUS)
40
—
V
L = 100
H, ID = 3 A
Gate to source breakdown voltage
V(BR)GSS
±10
—
V
IG = ±100
A, VDS = 0
Zero gate voltage drain current
IDSS
——
1.0
AVDS = 40 V, VGS = 0
Gate to source leak current
IGSS
——
±5
AVGS = ±6.5V, VDS = 0
Gate to source cutoff voltage
VGS(off)
1.1
—
2.1
V
ID = 10
A, VDS = 5 V
Forward transfer admittance
|yfs|0.5
1.2
—
S
ID = 450 mA, VDS = 10 V
Note3
RDS(on)
—
0.24
0.5
ID = 450 mA, VGS = 4V
Note3
Static drain to source on state
resistance
RDS(on)
—
0.16
0.3
ID = 450 mA, VGS = 10 V
Note3
Input capacitance
Ciss
—
14.0
—
pF
Output capacitance
Coss
—
68
—
pF
Reverse transfer capacitance
Crss
—
3.0
—
pF
VDS = 10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td(on)
—0.12
—
s
Rise time
tr
—0.6
—
s
Turn-off delay time
td(off)
—1.7
—
s
Fall time
tf
—1.4
—
s
VGS = 4 V, ID = 450 mA
RL = 22
Notes: 3. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3000ZY(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 40V 1A 3-Pin MPAK T/R |
| 2SK3000ZY-90TL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3000ZY-TL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 40V 1A 3-Pin MPAK T/R |
| 2SK3001 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:GaAs HEMT Low Noise Amplifier |
| 2SK3002 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:MOSFET |
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