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参数资料
| 型号： | 2SK3000 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MPAK-3 |
| 文件页数： | 3/7页 |
| 文件大小： | 119K |
| 代理商： | 2SK3000 |
2SK3000
Rev.3.00, Jun.16.2004, page 3 of 6
Main Characteristics
110
50
0
24
6
8
10
0
12
34
5
0.8
0.6
0.4
0.2
0
50
100
150
200
5
2
1
0.2
0.1
0.5
0.02
0.01
0.05
0.2
0.5
2
5
20
Tc = –25
°C
125
°C
25
°C
100 200
50
s
0.1
ms
1 ms
10
ms
PW
=
100
ms
(1
shot)
Ta = 25
°C
DC
Opera
tion
Note4
Note4 : When using the glass epoxy board
(10mm x 10mm x 1mm )
t
Channel
Dissipation
Pch
(W)
Ambient Temperature
Ta (
°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
V
= 5 V
Pulse Test
DS
Operation in
this area is
limited by R DS(on)
Drain
Current
I
(A)
D
5.0
4.0
3.0
2.0
1.0
10
1
100m
10m
1m
5 V
V
= 2.5 V
GS
6 V
4.5 V
10 V
4 V
3 V
3.5 V
Pulse Test
100
1.0
0.8
0.6
0.4
0.2
0
48
12
16
20
0.01
1
0.1
10
3
1
0.1
0.3
0.03
0.01
10
I
= 2 A
D
1 A
0.45 A
0.03
0.3
3
V
= 4 V
GS
10 V
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain
to
Source
On
State
Resistance
R
(
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Pulse Test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3000ZY(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 40V 1A 3-Pin MPAK T/R |
| 2SK3000ZY-90TL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3000ZY-TL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 40V 1A 3-Pin MPAK T/R |
| 2SK3001 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:GaAs HEMT Low Noise Amplifier |
| 2SK3002 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:MOSFET |
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