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参数资料
| 型号： | 2SK3000 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MPAK-3 |
| 文件页数： | 4/7页 |
| 文件大小： | 119K |
| 代理商： | 2SK3000 |
2SK3000
Rev.3.00, Jun.16.2004, page 4 of 6
5
2
1
0.2
0.5
0.1
0.2
0.5
1
2
10
5
25
°C
Tc = –25
°C
75
°C
Case Temperature
Tc
(
°C)
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
V
= 10 V
Pulse Test
DS
04
8
12
16
20
200
500
100
10
20
50
5000
2000
500
1000
100
200
50
1
2
5
0.5
0.2
0.1
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
500
200
50
100
10
20
5
0.05
1
5
4
3
2
1
0
0.4
0.8
1.2
1.6
2.0
V
= 0
GS
5 V
0.5
0.2
0.1
Applied
Power
Ps
(W)
Drain to Source DiodeReverse Surge
Destruction Characteristics
10
5
250
20
Ta = 25
°C
1 shot
10 V
Surge Pulse Width PW (mS)
5
2
0.05
V
= 4 V, V
= 10 V
PW = 5
s, duty < 1 %
GS
DD
t f
d(on)
t
d(off)
t
r
t
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
Source to Drain Voltage
V
(V)
SD
Reverse
Drain
Current
I
(A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
0
ID = 0.45 A
VGS = 4 V
10 V
0.45 A
Pulse Test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3000ZY(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 40V 1A 3-Pin MPAK T/R |
| 2SK3000ZY-90TL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3000ZY-TL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 40V 1A 3-Pin MPAK T/R |
| 2SK3001 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:GaAs HEMT Low Noise Amplifier |
| 2SK3002 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:MOSFET |
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