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参数资料
| 型号： | 2SK3058-Z-AZ |
| 元件分类： | JFETs |
| 英文描述： | 55 A, 60 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-25Z, TO-220SMD, 3 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 206K |
| 代理商： | 2SK3058-Z-AZ |
1998, 1999
MOS FIELD EFFECT TRANSISTOR
2SK3058
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D13097EJ2V0DS00 (2nd edition)
Date Published
April 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark 5 shows major revised points.
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super Low On-State Resistance
RDS(on)1 = 17 m
MAX. (VGS = 10 V, ID = 28 A)
RDS(on)2 = 27 m
MAX. (VGS = 4.0 V, ID = 28 A)
Low Ciss : Ciss = 2100 pF (TYP.)
Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0)
VDSS
60
V
Gate to Source Voltage (VDS = 0)
VGSS(AC)
±20
V
Gate to Source Voltage (VDS = 0)
VGSS(DC)
+20, –10
V
Drain Current (DC)
ID(DC)
±55
A
Drain Current (Pulse)
Note1
ID(pulse)
±165
A
Total Power Dissipation (TC = 25°C)
PT
58
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to + 150
°C
Single Avalanche Current
Note2
IAS
27.5
A
Single Avalanche Energy
Note2
EAS
75.6
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 30 V, RG = 25
, VGS = 20 V
→ 0
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3058
TO-220AB
2SK3058-S
TO-262
2SK3058-ZJ
TO-263
2SK3058-Z
TO-220SMD
Note
TO-220SND package is produced only in
Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
5
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PDF描述 |
|---|---|
| 2SK3058-AZ | 55 A, 60 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3058-S | 55 A, 60 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3075 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK3077 | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 2SK3096 | 7 A, 400 V, 0.87 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3058-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3059 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3060 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SK3060 Data Sheet | Data Sheet[04/2001] |
| 2SK3060-S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | TO-262AA |
| 2SK3060-Z | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 70A 3-Pin(2+Tab) TO-220 SMD |
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