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参数资料
| 型号： | 2SK3075 |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | 2-5N1A, 4 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 157K |
| 代理商： | 2SK3075 |
2SK3075
2007-11-01
1
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3075
RF Power MOSFET for VHF and UHFBand Power Amplifier
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for high
frequency Power Amplifier of telecommunications equipment.
Output Power
: PO ≥ 7.5W
Power Gain
: GP ≥ 11.7dB
Drain Efficiency
: ηD ≥ 50%
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
25
V
Drain Current
ID
5
A
Drain Power Dissipation
PD*
20
W
Channel Temperature
Tch
150
°C
Storage Temperature Range
Tstg
45~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Tc = 25°C When mounted on a 1.6mm glass epoxy PCB
Marking
Unit: mm
JEDEC
—
JEITA
—
TOSHIBA
25N1A
Weight: 0.08 g (typ.)
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PDF描述 |
|---|---|
| 2SK3077 | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 2SK3096 | 7 A, 400 V, 0.87 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3107 | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3109-S | 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3109-ZJ | 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3075(TE12L,Q) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:MOSF RF N CH 30V 5A PW-X |
| 2SK3075_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER |
| 2SK3076 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3076L | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3076S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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