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参数资料
| 型号： | 2SK3062-Z-AZ |
| 元件分类： | JFETs |
| 英文描述： | 70 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-25Z, TO-220SMD, 3 PIN |
| 文件页数： | 5/10页 |
| 文件大小： | 207K |
| 代理商： | 2SK3062-Z-AZ |
Data Sheet D13101EJ2V0DS
2
2SK3062
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V10
A
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 35 A
20
87
S
RDS(on)1
VGS = 10 V, ID = 35 A6.3
8.5
m
Drain to Source On-state Resistance
RDS(on)2
VGS = 4.0 V, ID = 35 A8.2
12
m
Input Capacitance
Ciss
VDS = 10 V5200
pF
Output Capacitance
Coss
VGS = 0 V1300
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
480
pF
Turn-on Delay Time
td(on)
VDD = 30 V ,ID = 35 A75
ns
Rise Time
tr
VGS(on) = 10 V1150
ns
Turn-off Delay Time
td(off)
RG = 10
360
ns
Fall Time
tf
480
ns
Total Gate Charge
QG
VDD = 48 V95
nC
Gate to Source Charge
QGS
VGS(on) = 10 V13
nC
Gate to Drain Charge
QGD
ID = 70 A30
nC
Body Diode Forward Voltage
VF(S-D)
IF = 70 A, VGS = 0 V0.97
V
Reverse Recovery Time
trr
IF = 70 A, VGS = 0 V70
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A /
s
140
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS(on)
10%
0
ID
90%
td(on)
tr td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3062-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3064 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK306400L | 功能描述:MOSFET N-CH 30V .1A S-MINI-3P RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3064G0L | 功能描述:MOSFET N-CH 30V .1A S-MINI-3P RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3065 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon N-Channel MOSFET |
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