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参数资料
| 型号： | 2SK3070L |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LDPAK-3 |
| 文件页数： | 10/14页 |
| 文件大小： | 78K |
| 代理商： | 2SK3070L |
2SK3070(L),2SK3070(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
40
——V
I
D = 10mA, VGS = 0
Gate to source leak current
I
GSS
—
±0.1
AV
GS = ±20V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 40 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
I
D = 1mA, VDS = 10V
Note1
Static drain to source on state R
DS(on)
—
4.5
5.8
m
I
D = 40A, VGS = 10V
Note1
resistance
—
6.5
10
m
I
D = 40A, VGS = 4V
Note1
Forward transfer admittance
|y
fs|50
80
—
S
I
D = 40A, VDS = 10V
Note1
Input capacitance
Ciss
—
6800
—
pF
V
DS = 10V
Output capacitance
Coss
—
1300
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
380
—
pF
f = 1MHz
Total gate charge
Qg
—
130
—
nc
V
DD = 25V
Gate to source charge
Qgs
—
25
—
nc
V
GS = 10V
Gate to drain charge
Qgd
—
30
—
nc
I
D = 75A
Turn-on delay time
t
d(on)
—
60
—
ns
V
GS = 10V, ID = 40A
Rise time
t
r
—
300
—
ns
R
L = 0.75
Turn-off delay time
t
d(off)
—
550
—
ns
Fall time
t
f
—
400
—
ns
Body–drain diode forward
voltage
V
DF
—
1.05
—
V
I
F = 75A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
90
—
ns
I
F = 75A, VGS = 0
diF/ dt =50A/s
Note:
1. Pulse test
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PDF描述 |
|---|---|
| 2SK3134(L) | |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3070L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3070S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3070STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3072 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3072-TB-E | 制造商:SANYO 功能描述:Nch 450V 0.03A 275 bo Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 450V 0.03A TO-253 |
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