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参数资料
| 型号： | 2SK3070L |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LDPAK-3 |
| 文件页数： | 12/14页 |
| 文件大小： | 78K |
| 代理商： | 2SK3070L |
2SK3070(L),2SK3070(S)
5
0
48
12
16
20
16
12
8
4
–50
0
50
100
150
200
0
V
= 10 V
GS
4 V
Pulse Test
0.5
0.4
0.3
0.2
0.1
Pulse Test
I
= 50 A
D
20 A
10 A
1
30
100
3
100
2
5
1
10
300
20
10
V
= 4 V
GS
10 V
Pulse Test
10, 20, 50 A
I
= 50 A
D
10, 20 A
0.1
0.3
1
3
10
30
100
500
100
200
20
50
10
2
5
1
0.5
Tc = –25 °C
75 °C
25 °C
V
= 10 V
Pulse Test
DS
50
1000
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(m
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
R
(m
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3134(L) | |
| 2SK3134(S) | |
| 2SK3135(L) | |
| 2SK3135(S) | |
| 2SK3147(L) | |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3070L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3070S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3070STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3072 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3072-TB-E | 制造商:SANYO 功能描述:Nch 450V 0.03A 275 bo Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 450V 0.03A TO-253 |
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