参数资料
型号: 2SK3111-S
元件分类: JFETs
英文描述: 20 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封装: FIN CUT, MP-25, TO-262, 3 PIN
文件页数: 7/10页
文件大小: 201K
代理商: 2SK3111-S
Data Sheet D13334EJ2V0DS
4
2SK3111
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
150
R
DS
(on)
-Drain
to
Source
On-State
Resistance
-
m
200
0
100
50
Tch - Channel Temperature - C
300
100
VGS = 10 V
Pulsed
350
250
150
50
ID = 10 A
ID = 20 A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
0.1
100
1000
1
10
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
10000
1000
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
1
0.1
10
100
1000
1
10
100
VDD = 100 V
VGS = 10 V
RG = 10
td(off)
td(on)
tr
tf
REVERSE RECOVERY TIME vs.
DIODE CURRENT
IF - Diode Current - A
trr
-
Reverse
Recovery
Time
-
ns
0.1
10
1
10
100
di/dt = 50 A/
s
VGS = 0 V
1
1000
V
GS
-
Gate
to
Source
Voltage
-
V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
10
20
3040
5060
50
100
150
200
2
4
6
8
0
10
12
14
16
0
VDD = 160 V
100 V
40 V
VGS
VDS
ID = 20 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
ISD
-
Diode
Forward
Current
-
A
0.0
0.1
1
10
0.5
1.0
1.5
100
VGS = 10 V
0 V
Pulsed
相关PDF资料
PDF描述
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相关代理商/技术参数
参数描述
2SK3111-ZJ 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3112 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor
2SK3112-AZ 制造商:Renesas Electronics 功能描述:Nch 200V 25A 110m@10V TO220AB Bulk
2SK3112S 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-262AA
2SK3112-S 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE