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参数资料
| 型号： | 2SK3111-ZJ |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | MP-25ZJ, TO-263, 3 PIN |
| 文件页数： | 8/10页 |
| 文件大小： | 201K |
| 代理商： | 2SK3111-ZJ |
Data Sheet D13334EJ2V0DS
5
2SK3111
5
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
0
20
40
60
80
100 120 140 160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature - C
P
T
-
Total
Power
Dissipation
-
W
0
20
40
60
80
100 120 140 160
70
60
50
40
30
20
10
0
FORWARD BIAS SAFE OPERATING AREA
10
100
1000
ID
-
Drain
Current
-
A
1
VDS - Drain to Source Voltage - V
100
10
1
0.1
100
s
10
ms
1 ms
PW
=10
s
RDS(on)
Limited
ID(pulse)
ID(DC)
3 ms
Po
wer
Dissipation
Limited
TC = 25C
Single Pulse
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth
(t)
-
Transient
Thermal
Resistance
-
C/
W
1
0.01
0.1
10
100
1m
10m
100m
1
10
1000
100
Single Pulse
10
Rth(ch-A) = 83.3 C/W
Rth(ch-C) = 1.92 C/W
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3113-AZ | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3113 | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3114-AZ | 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3114-AZ | 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3112 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3112-AZ | 制造商:Renesas Electronics 功能描述:Nch 200V 25A 110m@10V TO220AB Bulk |
| 2SK3112S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-262AA |
| 2SK3112-S | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3112-Z | 制造商:Renesas Electronics Corporation 功能描述: |
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