参数资料
型号: 2SK3114-AZ
元件分类: JFETs
英文描述: 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: MP-45F, ISOLATED TO-220, 3 PIN
文件页数: 2/8页
文件大小: 92K
代理商: 2SK3114-AZ
Data Sheet D13337EJ2V0DS
2
2SK3114
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
100
A
Gate Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 2.0 A1.0
50
S
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 2.0 A1.6
2.2
Input Capacitance
Ciss
VDS = 10 V
550
pF
Output Capacitance
Coss
VGS = 0 V
115
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
13
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 2.0 A12
ns
Rise Time
tr
VGS(on) = 10 V6
ns
Turn-off Delay Time
td(off)
RG = 10
35
ns
Fall Time
tf
RL = 10
12
ns
Total Gate Charge
QG
VDD = 450 V15
nC
Gate to Source Charge
QGS
VGS = 10 V4
nC
Gate to Drain Charge
QGD
ID = 4.0 A4.4
nC
Body Diode Forward Voltage
VF(S-D)
IF = 4.0 A, VGS = 0 V0.9
V
Reverse Recovery Time
trr
IF = 4.0 A, VGS = 0 V1.3
s
Reverse Recovery Charge
Qrr
di/dt = 50 A/
s4.3
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS(on)
10%
0
ID
90%
td(on)
tr td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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相关代理商/技术参数
参数描述
2SK3115 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR
2SK3115-AZ 制造商:Renesas Electronics 功能描述:Nch 600V 6A 1200m@10V IsolatedTO220 Bulk
2SK3116 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET
2SK3116-AZ 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 1200m@10V TO220AB Bulk
2SK3116B 制造商:NEC 制造商全称:NEC 功能描述:7.5A600V