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参数资料
| 型号： | 2SK3114-AZ |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 92K |
| 代理商： | 2SK3114-AZ |
Data Sheet D13337EJ2V0DS
6
2SK3114
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
m
1m
10m
100
L - Inductive Load - H
IAS
-
Single
Avalanche
Current
-
A
1.0
10
0.1
10
m
RG = 25
W
VDD = 150 V
VGS = 20
0 V
Starting Tch = 25C
E
AS
= 10.7
mJ
IAS = 4 A
PACKAGE DRAWINGS (Unit: mm)
Isolated TO-220 (MP-45F)
1.Gate
2.Drain
3.Source
10.0±0.3
3.2±0.2
φ
15.0±0.3
3±0.1
12.0±0.2
13.5
MIN.
4±0.2
0.7±0.1
1.3±0.2
1.5±0.2
2.54 TYP.
123
2.5±0.1
0.65±0.1
4.5±0.2
2.7±0.2
SINGLE AVALANCHE ENERGY
DERATING FACTOR
75
150
125
120
80
40
0
Starting Tch - Starting Channel Temperature - C
Energy
Derating
Factor
-
%
50
100
25
VDD = 150 V
RG = 25
W
VGS = 20
0 V
IAS
4 A
100
60
20
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3115 | 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3119 | 2 A, 20 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3123 | 15 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3126 | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3127(2-10S2B) | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3115 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SK3115-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 6A 1200m@10V IsolatedTO220 Bulk |
| 2SK3116 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 1200m@10V TO220AB Bulk |
| 2SK3116B | 制造商:NEC 制造商全称:NEC 功能描述:7.5A600V |
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