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参数资料
| 型号： | 2SK3114-AZ |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 92K |
| 代理商： | 2SK3114-AZ |
Data Sheet D13337EJ2V0DS
3
2SK3114
TYPICAL CHARACTERISTICS (TA = 25°C )
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Tch - Channel Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
040
20
60
100
140
80
120
160
100
80
60
40
20
0
TC - Case Temperature - C
P
T
-Total
Power
Dissipation
-
W
080
20
40
60
100
140
120
160
40
30
20
10
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
FORWARD BIAS SAFE OPERATING AREA
10
100
1 000
ID
-
Drain
Current
-
A
1
VDS - Drain to Source Voltage - V
100
10
1
0.1
Po
wer
Dissipation
Limited
100
ms
10
ms
1 ms
100
m
s
PW
=10
ms
R
D(on)
Limited
ID(pulse)
ID(DC)
3 ms
TC = 25C
Single Pulse
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth
(t)
-
Transient
Thermal
Resistance
-
C/
W
100m
1
10
100
1 000
10m
1m
100
m
10
m
100
10
1
0.1
0.01
Rth(CH-A) = 62.5 C/W
Rth(CH-C) = 4.17 C/W
Single Pulse
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3115 | 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3119 | 2 A, 20 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3123 | 15 A, 60 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3126 | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3127(2-10S2B) | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3115 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SK3115-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 6A 1200m@10V IsolatedTO220 Bulk |
| 2SK3116 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 1200m@10V TO220AB Bulk |
| 2SK3116B | 制造商:NEC 制造商全称:NEC 功能描述:7.5A600V |
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