参数资料
型号: 2SK3153
元件分类: JFETs
英文描述: 15 A, 120 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: TO-220FM, 3 PIN
文件页数: 10/12页
文件大小: 68K
代理商: 2SK3153
2SK3153
5
0
48
12
16
20
200
160
120
80
40
–40
0
40
80
120
160
0
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(m
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(
°C)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
V
= 10 V
GS
4 V
Pulse Test
Static
Drain
to
Source
on
State
Resistance
R
(m
)
DS(on)
2.0
1.6
1.2
0.8
0.4
Pulse Test
I
= 15 A
D
5 A
10 A
1
30
100
3
1000
30
10
100
5 A, 10 A
I
= 15 A
D
15 A
0.1
0.3
1
3
10
30
100
10
30
3
1
0.3
0.1
300
0.1
0.3
V
= 4 V
GS
10 V
Pulse Test
V
= 10 V
Pulse Test
DS
Tc = –25
°C
25
°C
75
°C
5 A, 10 A
相关PDF资料
PDF描述
2SK3155 15 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3156-E 20 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3158-E 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3159 0.042 ohm, POWER, FET
2SK3159 50 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
2SK3153-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3154 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3154-E 制造商:Renesas Electronics Corporation 功能描述:
2SK3155 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3155-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 150V 15A 3-Pin(3+Tab) TO-220FM Box