参数资料
型号: 2SK3153
元件分类: JFETs
英文描述: 15 A, 120 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: TO-220FM, 3 PIN
文件页数: 8/12页
文件大小: 68K
代理商: 2SK3153
2SK3153
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
120
V
I
D = 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 120 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
2.5
V
I
D = 1mA, VDS = 10V
Static drain to source on state R
DS(on)
—6585m
I
D = 8A, VGS = 10V
Note4
resistance
R
DS(on)
80
110
m
I
D = 8A, VGS = 4V
Note4
Forward transfer admittance
|y
fs|
8.5
14
S
I
D = 8A, VDS = 10V
Note4
Input capacitance
Ciss
860
pF
V
DS = 10V
Output capacitance
Coss
360
pF
V
GS = 0
Reverse transfer capacitance Crss
195
pF
f = 1MHz
Turn-on delay time
t
d(on)
15
ns
I
D = 8A, VGS = 10V
Rise time
t
r
95
ns
R
L = 3.75
Turn-off delay time
t
d(off)
200
ns
Fall time
t
f
130
ns
Body–drain diode forward
voltage
V
DF
0.9
V
I
F = 15A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
100
ns
I
F = 15A, VGS = 0
diF/ dt =50A/
s
Note:
4. Pulse test
相关PDF资料
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2SK3155 15 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
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相关代理商/技术参数
参数描述
2SK3153-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
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2SK3154-E 制造商:Renesas Electronics Corporation 功能描述:
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