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参数资料
| 型号： | 2SK3153 |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 120 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-220FM, 3 PIN |
| 文件页数： | 11/12页 |
| 文件大小： | 68K |
| 代理商： | 2SK3153 |
2SK3153
6
0.1
0.3
1
3
10
30
0
10
20
30
40
50
100
1000
300
200
160
120
80
40
0
20
16
12
8
4
20
40
60
80
100
0
100
10
20
2
1
0.1 0.2
2
10
1000
100
300
30
10
30
20
1
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
10
I
= 15 A
D
VGS
0.5
5
50
5
50
3000
VDS
V
= 120 V
50 V
25 V
DD
di / dt = 50 A / s
V
= 0, Ta = 25 °C
GS
10000
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
V
= 120 V
50 V
25 V
DD
200
500
1000
r
t
d(on)
t
d(off)
t
t f
V
= 10 V, V
= 30 V
PW = 5 s, duty < 1 %
GS
DD
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3155 | 15 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3156-E | 20 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3158-E | 30 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3159 | 0.042 ohm, POWER, FET |
| 2SK3159 | 50 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3153-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3154 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3154-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3155 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3155-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 150V 15A 3-Pin(3+Tab) TO-220FM Box |
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